Abstract
CH3NH3PbI3 thin films were formed with various deposition rates of PbI2 first layer using a sequential vacuum evaporation method (SVE) to understand the formation behavior. Under low PbI2 deposition rates with 1 and 3 Å s−1, the thin films did not form the hybrid perovskite structure. Over the 6 Å s−1 deposition rate, the perovskite structure is observed with the remaining PbI2 and an intermediate phase together. In the 10 Å s−1, the intermediate phase is increased, and the CH3NH2 molecular defect is observed. The hybrid perovskite thin film formed by SVE is confirmed with tiny grains and CH3NH2-incorporated intermediate state.
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