Abstract
Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the binary melt due to a segregation element separation was analyzed. Calculation results were compared with known experimental data characterizing the duration of laser-induced phase transformations and average sizes of the cells (which are formed due to the effect of concentration supercooling) as a function of the power density in the laser pulse.
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