Abstract
Formation of a carbonized porous silicon surface by thermal and photo-assisted reaction with gas phase acetylene is reported. The porous silicon samples subjected to flowing acetylene either in a heated quartz reactor or under optical illumination show strong quenching of the photo- luminescence (PL) followed by a recovery on further exposure to acetylene. In thermally treated samples, a significant blue shift of 80 nm was observed. The recovered PL signal does not exhibit quenching on further exposure to laser illumination. Fourier transform infrared spectroscopy investigations confirm absence of Si–Hx absorption and no enhancement of the oxygen back bonded Si–H bonding. It indicates the formation of a practically stable carbonized porous silicon surface.
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