Abstract
Carbon nitride films have been synthesized on Si(100) substrates by using DC sputtering assisted with a high density m=0 mode helicon wave-excited plasma in Ar and N2 mixture. The composition, structure and bonding state of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy. From the XPS analysis it was found that the nitrogen to carbon (N/C) ratio in the films could be controlled over a wide range of 0.2–0.9 by changing the target voltage and nitrogen mixing rate via the production of a high density plasma of 1012–1013 cm-3. FT-IR spectroscopy indicated the appearance of an absorption band near 2200 cm-1 corresponding to C≡N covalent bonding. The XPS analysis also suggested the existence of a β-C3N4 phase with sp3 bonding correlated with the variation of the film microhardness.
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