Abstract
The silicon carbide films were grown on a Si(1 1 1) substrate by radio frequency (RF) magnetron sputtering at room temperature. Carbon nanowires were obtained after annealing at 1150 °C for 3 h in a H 2 atmosphere. Fourier transform infrared transmission spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to analyze the structure, composition and surface morphology of the films. The results confirmed the formation of carbon nanowires.
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