Abstract
The use of focused ion beams and atomic plasma chemical etching for forming an array of field emission structures on surface of SiC substrates is considered. SF6 was used as the fluorine-containing gas. Topology of formed elements was monitored using scanning electron microscopy method at Nova NanoLab 600. Dependences of geometric parameters of formed structures (topology of tip and its depth) on emission current were determined. Dependence of change in applied voltage and generated electric field of used to study probe on emission current density is also considered.
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