Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions

Abstract

We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H+ and He+, are implanted into a Si substrate instead of O+ implantation in the SIMOX (separation by implanted oxygen) process. The atmospheric oxygen atoms precipitate at the implantation damage during high temperature annealing in an oxydizing atmosphere. A continuous buried oxide layer was successfully formed in a Si substrate under the appropriate conditions, particularly a slow ramping rate and a high oxygen concentration in the atmosphere for the anneal.