Abstract
We have studied the formation of buried high-resistivity layers in InP single crystals by MeV ion implantation. It was found that the implantation of MeV nitrogen ions plus subsequent thermal annealing can generate a deep burried layer with resistivity up to about 10 6 Ω cm in n-type InP crystals. This layer has exhibited implant dose dependence, high thermal stability and reproducibility over a dose range of 5 × 10 14 −1 × 10 16 cm −2. The mechanism of insulating layer generation by implanation, based on cross sectional transmission electron microscopy (XTEM) and I– V curve measurements, as well as the application of this technique in device fabrication, will be discussed.
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