Abstract
We have studied the formation of buried high-resistivity layers in InP single crystals by MeV ion implantation. It was found that the implantation of MeV nitrogen ions plus subsequent thermal annealing can generate a deep burried layer with resistivity up to about 10 6 Ω cm in n-type InP crystals. This layer has exhibited implant dose dependence, high thermal stability and reproducibility over a dose range of 5 × 10 14 −1 × 10 16 cm −2. The mechanism of insulating layer generation by implanation, based on cross sectional transmission electron microscopy (XTEM) and I– V curve measurements, as well as the application of this technique in device fabrication, will be discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
