Abstract
We studied the rate at which the anodic plasma oxide growth on Al/InP, Al/Si, Al/GaAs and Sm/GaAs proceeded. In all cases a faster oxide growth has been observed compared to free semiconductor surfaces. Modelling of the growth processes indicates that both the density of the negative oxygen ions on the surface and their migration coefficient are enhanced in structures with an overlayer. Bond's method of measurement of the GaAs lattice parameter and SIMS analysis lead us to conclude that the semiconductor crystal lattice near the surface (in depth less than 200 nm) is impaired to such a level that it markedly influences the reaction rate between the negative oxygen ions and semiconductor interface atoms. It implies inclusion of the corresponding cross-section into the equations describing the growth of the anodic oxide.
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