Formation of and phase transitions in electrodeposited tellurium atomic layers on Au(1 1 1)

Abstract

Detailed studies of the structures formed by the electrodeposition of atomic layers of Te on Au(1 1 1) surfaces from aqueous solutions were performed using in situ scanning tunneling microscopy (STM), as well as by UHV-EC techniques such as low energy electron diffraction and Auger electron spectroscopy. There are two features in the voltammetry that may be considered underpotential deposition (UPD). However, from the voltammetry, it is clear that the deposition process is kinetically slow, and from this study it appears that several atomic layer structures are actually formed at overpotentials. Prior to deposition, a surface excess of a tellurium oxide species coats the surface. This layer is then converted to a Au(1 1 1)(√3×√3) R30°–Te structure with an array of domain walls, at ∼1/3 ML. The initial structure appears to have a symmetric array of walls, resulting in a (13×13) periodicity, which then converts to a less symmetric structure where the domain walls form rhombi, with a larger periodicity. During the second UPD feature, the coverage increases, forming a (√7×√13) unit cell at 0.36 ML and then a (3×3) at 0.44 ML. Commensurate with the formation of these higher coverage structures, a roughening transition takes place, where the surface becomes pitted, resulting in about 40% of the surface being covered with single atom deep pits. This process appears to be related to the pits formed in the surfaces of self-assembled monolayers (SAM) of thiols on Au surfaces, and layers of Se and S on Au surfaces. Several theories have been suggested to account for these pits. The model that appears to best explain the pits is based on shrinking of the size of the underlying Au atoms, reconstructing the underlying Au. There also appears to be a high coverage structure, near 0.9 ML, that forms at potentials near where the (3×3) forms, but only by holding the potential for an extended period of time. Subsequent dissolution of this high coverage structure produces domains of disordered Te atoms, which gradually decrease in coverage until the (3×3) is again formed at 0.44 ML.