Abstract
GaSb and AlSb are very interesting semiconductors widely used in multiple applications such as optoelectronics or thermophotovoltaic cells. AlSb has higher band gap than GaSb but very similar lattice parameter, which allows the fabrication of lattice-matched films with different energy band gap over GaSb substrates. Moreover the ternary alloys, in the system AlxGa1−xSb, are very interesting for semiconductor device engineering where the capacity of creating lattice-matched heterostructures with different band gap is very important. In this work, we present a study on the formation of AlxGa1−xSb films on GaSb substrates by Al diffusion. Al thin films were evaporated over GaSb substrates and then annealed with different time and temperature conditions. RBS measurements has been performed to analyze the diffusion profile and to calculate the thickness of the AlxGa1−xSb films. The dependence of the characteristics of the films with annealing time and temperature is analyzed. EDAX and XRD analysis have been performed to calculate the specific composition of the alloy depending on the film growth parameters
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