Abstract
Nanohole tetragonal and trigonal arrays as well as Al dot tetragonal and hexagonal arrays were successfully formed on Si substrates by the use of AFM nano-indentation and anodic oxidation. The ordered array of nanoholes could be obtained only at an indenting interval that depended on the anodic voltage. An Al dot hexagonal array with the nearest neighbor distance of 34 nm was formed. For further shrinkage of the Al dots, reduction of the indenting interval at an adequate anodic voltage would be necessary.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
