Abstract
ABSTRACTAn ionized cluster beam (ICB) source has been developed for high rate deposition, and its possible application to ultra large scale integrated circuit (ULSI) metallization was investigated. Aluminum films were deposited onto oxidized silicon wafers using the ICB source. It was shown that an electrical resistivity was almost the same as the value for bulk aluminum, and the surface morphology of deposited films was improved by controlling the ionization and acceleration conditions of the cluster beam. It was confirmed that the ICB method showed an excellent coverage profile in contact holes when compared with the conventional sputtering method. Using the directivity of cluster beams, contact holes of 1.5 in aspect ratio were successfully metallized. From these results, it became evident that the ICB source is a favorable method for ULSI metallization.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
