Formation of AlN nanowires using Al powder

Abstract

Using direct nitridation method of Al powder, single crystalline AlN nanowires were synthesized. The morphology of synthesized AlN nanowires depending on the nitridation temperature and atmosphere was investigated using XRD, SEM and TEM techniques. At 1100 °C in N 2 atmosphere, the diameter of the synthesized AlN nanowires was about 60–75 nm having a high aspect ratio. However, at 1000 °C in N 2 + 10% H 2 atmosphere, the diameter of the AlN nanowires was about 80–120 nm having high yield and minimum agglomeration. The synthesized AlN nanowires had hexagonal single crystal structure, covered with a thin (∼1.5 nm) amorphous layer and large number of stacking faults along the (0 0 2) plane.