Formation of acceptor centers under the action of redox media on the surface of Cd x Hg1 − x Te films

Abstract

The effect of redox media on the formation of acceptor centers in the CdxHg1 − xTe films grown by molecular beam epitaxy on the GaAs (301) substrates is studied. When tested for long-term stability, the untreated n-type films do not change their parameters, whereas the treated films exhibit a decrease in the conductivity and the mobility of charge carriers by nearly two orders of magnitude. It is shown that, on the treatments, a source of acceptors is formed at the surface, and the acceptors are most likely mercury vacancies.