Abstract
A method of ultra-thin GaAsSb and GaPSb solid solutions layers formation by supplying vapors of As or P to heated GaSb crystal plates is proposed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
