Abstract
The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more efficiently in the region of the maximum of the implanted impurity distribution and at the boundaries of the ion irradiation region.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
