Abstract

The surface oxidation of epitaxial and polycrystalline Gd samples grown in ultrahigh vacuum on W(110) substrates has been investigated using Auger-electron spectroscopy (AES) and low energy electron diffraction (LEED). The surface crystallography of clean epitaxial films monitored by LEED is hcp(0001) and remains unchanged even after 300 L oxygen exposure at room temperature. The LEED pattern of bulk Gd 2O 3 in Mn 2O 3 structure is observed only when oxygen is exposed at an elevated substrate temperature of about 500°C. AES clearly reveals various stages of oxidation as a function of the oxygen exposure for epitaxial as well as polycrystalline films. It is found that the oxidation does not proceed beyond one monolayer of the Gd surface.

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