Formation of a p n junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

Abstract

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1̄1̄1)Ga planes with 6 μm periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.