Abstract
p-Type silicon coated zinc oxide (ZnO) nanowire heterojunction was fabricated using a combination of aluminium induced crystallization (AIC) and hydrothermal growth. The p-type AIC Si/n-type ZnO nanowires stacked layers were extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), UV–vis spectroscopy, XRD, photoluminescence emission spectroscopy and electrical measurements. Photovoltaic measurements indicate that the device is light-sensitive and maybe of potential in sensor applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
