Abstract
A heteroepitaxial GexSi1-x (x = 0.14) alloy layer was formed by pulsed 7 MeV electron-beam irradiation at room temperature. A Ge film 3000 Å thick was vacuum evaporated onto Si(111). After irradiation by a fluence of (3.0–5.0)×1018 electrons cm-2 at room temperature (40 or 60°C), the formation of the epilayer was confirmed from (111) X-ray diffraction measurements and Rutherford backscattering spectrometry. The irradiation introduced many Frenkel pairs into the sample, and these defects enhanced the diffusion at the interface.
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