Abstract
The room temperature epitaxial growth of Fe films on the As-rich GaAs(001)-(2×4) surface is studied using x-ray photoelectron spectroscopy as well as reflection high-energy electron diffraction and photoelectron diffraction. Interdiffusion mechanisms take place between Fe and GaAs during the deposition of the first 4 ML (0.7nm) Fe. The authors find that an Fe-based substitutional alloy with a body-centered-cubic structure confined on several atomic planes and containing 30% of foreign species (Ga and As atoms) sits at the Fe∕GaAs(001) interface. This intermixed layer is then buried by an almost pure Fe layer.
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