Formation of 3D islands of metal oxides on silicon covered by native oxide film by multi-step ion sputtering of Ti, Nb and V

Abstract

Phase formation and change in morphology of Ti, V and Nb oxide films on (100)Si, with native oxide layer, have been studied by XPS in situ. The metal oxides were formed by the interaction at room temperature in UHV of multi-step deposited of Ti, V or Nb with the native oxide. The formation of clean silicon regions during the growth of three-dimensional metal oxide islands was observed. The difference in magnitudes of the metal particle moments, when they hit the native oxide surface, influences the character of metal particle interactions with native oxide.