Abstract
Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films with 111- and 001/100-orientations were fabricated on silicon substrates covered with platinum (Pt). Amorphous PZT (a-PZT) films were deposited on Pt bottom electrodes by liquid delivery metalorganic chemical vapor deposition and subsequent postannealing by a special heating stage equipped with an X-ray diffraction system. Variations in the 111 d-space of Pt and the crystallization behavior of PZT layers were in situ measured in postannealing processes. The existence or absence of lead platinum intermediates in a-PZT layers near Pt bottom electrodes at the beginning of crystallization are suggested to be the key factor for obtaining 111- or 001/100-oriented crystalline PZT thin films.
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