Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

Abstract

The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals was studied by in situ observation. We directly observed the morphological transformation of the crystal-melt interface during the unidirectional growth of Si-rich SiGe. It was found that the morphology of the interface transformed from a planar to a zigzag facets to a faceted cellular interface with increasing growth rate. It is clarified that Ge segregation at valleys of zigzag facets leads to the formation of a cellular structure in Si-rich SiGe crystals.