Abstract
The mesoporous GaN (MP-GaN) Distributed Bragg reflectors (DBRs) with tunable spectral stop-band across visible spectrum are fabricated by electrochemical etching in the neutral solution. The formation mechanism of MP-GaN layer in the DBR is first studied via the differential interference contrast microscopy. Then the self-standing MP-GaN DBR is first separated from the sapphire substrate via an annealing technology, and is transferred to a foreign substrate. The transferred MP-GaN DBR with high quality presents high reflectivity (>90%) and large stop-band widths (>100 nm). And the improved crystalline quality is due to the reduced defect density and the total stress relaxation of the GaN film. The high reflectivity and good crystalline quality render the lift-off MP-GaN DBR a promising application prospect in flexible optoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
