Abstract
Polymorphic Si nanostructures (particle, sheet, ribbon) are generated through isotropic, anisotropic, and coalescence growth using a DC arc-discharge plasma method.
Highlights
Silicon is one of the most abundant elements on Earth, with an extremely important role in nature and modern society
Nitrogen adsorption results (Fig. S1a†) show that the speci c surface area of Si NPs is about 110.9 m2 gÀ1
The interplanar spacing of silicon nanoribbons (Si NRs) is about 3.1 A, which is in a good agreement with the distance between adjacent (111) lattice planes in silicon nanosheets (Si NSs) (Fig. 1f), suggesting that the NRs consist of smaller NSs through discernable interfaces
Summary
Silicon is one of the most abundant elements on Earth, with an extremely important role in nature and modern society.
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