Formation energy of vacancy in silicon determined by a new quenching method

Abstract

By applying a new quenching method, we determined the formation energy of vacancies (V) in high-purity silicon. Specimens were sealed in quartz capsules together with H 2 gas and heated at high temperatures for 1 h followed by quenching in water. By this method, V are quenched in the form of complexes with hydrogen and the formation energy of V can be determined from the quenching temperature dependence of the intensity of the optical absorption peak due to the complexes. The formation energy of V in high-purity silicon was determined to be about 4.0 eV. This value is in good agreement with results of recent theoretical calculations.