Abstract
Silicides are widely used in silicon integrated circuits as contacts and interconnections. In many applications silicides are used on polycrystalline silicon (polysilicon) such as the gates of FETs and the emitter of bipolar transistors. The use of silicide on polysilicon structures presents a number of unique challenges both in formation of the silicide and in morphological stability during high temperature processing. The purpose of this paper is to review the formation, morphology, and thermal stability of silicides on polysilicon. Mechanisms for silicide roughening on polysilicon are discussed including non-uniform initial reactions, agglomeration, and silicide enhanced grain growth. Results for silicides on polysilicon are compared with those on single crystal Si where relevant, A detailed description of silicide instability and device degradation is presented for a number of silicides, emphasizing TiSi2, CoSi2, and WSi2. Finally, methods for improving the stability of silicides on polysilicon are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.