Abstract
Separation by implanted oxygen (SIMOX) is possible only when a continuous buried oxide (BOX) is synthesized. The formation of the buried oxide is controlled by SiO 2 precipitation, which may occur in three ways: homogeneous, heterogeneous, or “etherogeneous” precipitations. These mechanisms take place in competition and the resulting BOX will be influenced by the prevalence of one or the other in as-implanted condition, and by their ability to drive the subsequent evolution during final high-temperature (⋍ 1350°C) annealing. The prevailing mechanism (which is controlled by machine parameters such as the implantation energy, target temperature and fluence rate) affects the evolution with fluence of the Si-SiO 2 interface depth and the presence of silicon inclusions in the BOX. A tentative scheme for prevision of the SIMOX spectrum (i.e., the set of fluence values allowing the formation of a continuous BOX) as a function of the operation parameters is proposed. The scheme is validated in a few cases by studying the evolution with fluence of buried Si-SiO 2 interfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
