Abstract
Surface morphology and hillock reduction were studied on m-plane {11¯00} n-type GaN films and light emitting diode structures grown by metal organic chemical vapor deposition on low defect-density m-plane GaN substrates. For nominally on-axis m-plane films, predominantly pyramidal hillocks were observed, which were composed of two faces symmetrically inclined by 0.1°–0.25° to the ±[112¯0] a direction and two faces inclined by 0.5°–0.95° to the [0001¯] c− and the [0001] c+ directions, respectively. All faces of the pyramidal hillocks for the nominally on-axis GaN films had clearly defined step-terrace structures. Gradual changes in nominal miscut angles from 0° to 10° along the a and the c− directions succeeded in a continuous hillock reduction yielding atomically flat surfaces.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
