Abstract
ABSTRACTThermoelectric generators (TEG) are capable of transforming waste heat directly into electric power. With higher temperatures the yield of the devices rises which makes high-temperature contact materials important. The formation of titanium disilicide (TiSi2) and its properties were analyzed and optimized for the use in TEG. Depending on a direct or an indirect transformation into the C54 crystal structure the process forms a layer with a resistivity of 20-22 μΩcm. Process gases influence the resistivity and result in difference of 20 %. The growing rate of TiSi2on silicon dioxide was determined; it shows a strong dependence on the used atmosphere and temperature. A maximum overgrowing length of 30 μm was found.
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