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Abstract
AlN nanowires have been successfully prepared via melting Al powder in a NH 3 atmosphere with variable flow rate. The as-prepared nanowires are composed of AlN with diameters of 5 to 40 nm, and lengths of tens of microns. Radian scattering spectra and photoluminescence (PL) of as-prepared AlN nanowires are also investigated. As a result of impurity incorporation and stress, the Raman spectra are shifted to lower frequencies. A blue emission band centered at 434 nm is observed. The PL mechanism of AlN nanowires is discussed.
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