Abstract
The epitaxial growth technique of ultrahigh density (>1012 cm-2) Fe3Si nanodots (NDs) on Si(111) substrates was developed using an ultrathin SiO2 film technique. Low temperature (<300 °C) growth of the Fe3Si NDs was needed to suppress the interdiffusion between Fe atoms deposited on the sample surface and Si atoms in the substrate. The ND shape changed drastically from sphere to discontinuous films as the Fe content was increased slightly from a stoichiometric ratio of Fe:Si of 3:1. For almost-spherical NDs with the ultrahigh density, a transition from superparamagnetism to ferromagnetism was observed at specific temperatures, the ferromagnetism of which included the magnetic dipole interactions in ultrahigh density ND system. These ND structures with ND size dependence of the coercive force were expected to be selectively used as both magnetically fixed and free layers in magnetic tunneling junction structures only by changing the ND size.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
