Abstract
Li 2S–GeS 2–Ga 2S 3 glasses and thin films were prepared and their conductivities were compared. Bulk glasses were melted in Si-coated silica tubes. The glass-forming region was observed at cation ratios of 0 or 40–70% Li and less than 50% Ga. Thin films with a wider composition range were formed by RF sputtering. Conductivities were almost identical in bulk glasses and films of similar composition and increased along with increasing Li 2S content. Conductivity and glass transition temperature ( T g) increased slightly with addition of a moderate amount of Ga 2S 3. These results are due to the mixed-former effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
