Abstract
High quality La 2 / 3 Ba 1 / 3 MnO 3 (LBMO), La 2 / 3 Ca 1 / 3 MnO 3 (LCaMO) and La 2 / 3 Ce 1 / 3 MnO 3 (LCeMO) thin films were grown on Nb 0.1 wt.% doped conducting SrTiO 3(100) (STON) substrates. Asymmetric current–voltage relations measured for the LBMO/STON, LCaMO/STON and LCeMO/STON heterostructures at T = 78/300 K certified hole-doping of the manganite films. The diffusion voltage, corresponding to a steep current increase at forward bias has been estimated. The LCaMO/STON heterojunction showed possible impact of interfacial strain on the rectifying behavior, meanwhile, the LaCeMO/STON heterostructures demonstrated evidence of phase separation of the manganite film at the interface.
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