Formation and growth mechanism of ripple-like AlN nanowires

Abstract

Single-crystal ripple-like AlN nanowire with tuned diameter was fabricated through direct reaction aluminum with nitrogen by arc discharge method. The nanowires grow along the [0001] direction and have a radial expansion along the \([10\bar{1}0]\) direction. The periodic variation of the radial expansion toward \([10\bar{1}0]\) direction produces the ripple-like AlN nanowires. The growth mechanism of the AlN nanowires is discussed by considering the Al adlayer diffusion on the polar (0001) surface.