Abstract
The nature of damage produced by low energy Ar + ion and Ar atom milling in the II–VI semiconductors CdTe, ZnS and ZnSe is studied in detail by conventional and high resolution transmission electron microscopy. It is demonstrated that the damage consists of dense arrays of small dislocation loops near to each milled surface. When ion or atom milling of this type is used for thin specimen preparation prior to microscopy the loop arrays can seriously obscure images and so complicate their interpretation. This problem concerning the presence of artifactual defects can be greatly reduced by the use of reactive I + ion milling for specimen thinning and, in the case of CdTe, spurious dislocation loop formation can be completely suppressed.
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