Abstract
The radiation-induced defects in a 20-nm-thick SiO2 film on a silicon wafer are studied by optically stimulated electron emission. Accelerated (12-keV) silicon ions is found to generate various oxygen-deficient centers, among which E′-type defects are dominant. Subsequent irradiation by 23-MeV electrons changes the defect structure of the SiO2 film: the defects induced by ion implantation decompose.
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