Abstract
Processes of muonium atom formation and disappearance via electron capture and loss by positive muons in semiconductors have been studied using μ SR techniques. Experiments in GaAs, GaP and CdS suggest that the electron is initially captured into a highly excited state. Cascading down to the ground state muonium goes through an intermediate weakly bound effective mass state (EMS) whose hydrogenic electron structure is determined by the electron effective mass and the dielectric constant of the host. We suggest that muonium dynamics in semiconductors (including the effects of electric and magnetic fields and temperature) reflect the electron dynamics in weakly bound muonium state(s) in which the electron is delocalized over distances of about 100 Å .
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