Abstract
Buried double oxide structures in Si have been produced by the sequential high- and low-energy implantation of oxygen ions at 2 MeV and 90 keV, respectively. Each implantation step was followed by a high-temperature anneal at 1300 °C for 6 h. Fourier transform infrared reflection spectroscopy has been used in order to characterize the as-implanted and annealed samples. Rutherford backscattering spectroscopy/channeling analysis was also carried out for selected samples. The morphology of the two buried layers is the same as for the single energy implants. No interaction or transport of oxygen between the two layers is observed. The in-between buried Si layer as well as the Si overlayer are of high crystal quality and could be potentially used as waveguiding layers, in a Si-based optical waveguiding structure.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
