Abstract
The Si clusters are prepared by inert gas condensation method and then softly land on the mother skeleton of the porous silicon (PS), and thus quasi-free clusters are formed. Several new Raman peaks are observed and identified as surface modes of Si clusters and their combination with TA modes for the first time. Good agreement is achieved between the experimental observations and the calculated results.
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More From: Zeitschrift f�r Physik D Atoms, Molecules and Clusters
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