Abstract
Abstract Different methods of forming metal-semiconductor junctions are discussed. Included are metal evaporation under different conditions as well as sputter deposition and silicide formation. Analysis of the film and interface structure by RBS and ESCA are described, together with analysis of the forward IV-characteristics for the barrier characterization. Edge effects and their influence are treated and the photoelectric barrier height determination is discussed. Also included are computer fitting methods used in barrier characterization by photoelectric and IV-methods. Minority carrier injection for very high barriers is described, whereby computer simulation of carrier transport is used, showing that minority carrier injection is important and influences barrier height determination.
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