Abstract
A new fabrication route based on a solution chemistry with metal alkoxide was developed for a compound semiconductor cadmium telluride (CdTe) film. CdTe-double-alkoxide solution was prepared by the reaction of cadmium acetate with Na-alkoxide in the presence of Te-alkoxide in ethanol. Considering the moisture sensitive properties of metal alkoxides, cadmium telluride films was produced by heat-treatment at 400°C in H2 of hydrolysis product films of the corresponding metal alkoxides, which were formed by screen printing and spin coating. Although the good CdTe film couldnot be obtained by screen printing, spin coating has yielded a dense CdTe film. A surface of the spin coating film was leveling by mechanically polishing. The produced films were characterized by X-ray diffraction, atomic force microscopy, optical absorption, and optical irradiation current-voltage measurements. Optical absorption spectra were observed the characteristic absorption in about 830nm. The optical bandgap of the films was estimated from the optical absorption versus a photon energy plots, and obtained values were 1.43±0.01eV. The measured electrical conductivities of the films varied from 10-8 to 10-5 (Ω·cm)-1 with optical intensity.
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