Abstract
The effects of interface structure on the formation and characteristics of a LaB 6/chemically etched GaAs(001) Schottky barrier have been investigated using current-voltage measurements, high energy ion scattering and X-ray photoelectron spectroscopy. Barrier heights are 0.7 eV for as-deposited samples and 0.9 eV after annealing at 400–800°C. Annealing above 400°C causes reduction of GaAs native oxides and relaxation of interface disorder. This interface structure is found to determine the pinning position of the Fermi level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
