Abstract
A method is proposed which allows the safe operation of devices with many modes and eliminates the need for separate gates. The method relies on the adjustment of the MOS channel gate threshold voltages in various regions of the structure. Then a single MOS gate controls the operating modes, which are selected automatically as the gate voltage is changed. An example structure is described and its operation discussed. It is concluded that investing such control in the familiar single MOS gate will make this approach applicable to a large range of new and emerging power semiconductor devices and other electronic structures.
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