Forgetting memristors and memristor bridge synapses with long- and short-term memories

Abstract

In this paper, an ideal current source forgetting memristor model is proposed. Based on the model, three kinds of synapses with long- and short-term memory are designed: the series forgetting memristor synapse, the forgetting memristor bridge synapse written independently and the forgetting memristor bridge synapse written in batches. Combined with the forgetting property, the long- and short-term weight of the forgetting synapse can be controlled by the long- and short-term resistance of memristors. Compared the three forgetting synapses, the series forgetting memristor synapse has the lowest requirement for memristors, the forgetting memristor bridge synapse written independently is the most flexible, and the forgetting memristor bridge synapse written in batches is the most convenient. Compared with traditional synapses, forgetting synapses with long- and short-term memory have multi-weight storage. When forgetting synapses are applied to associative memory, it can be found more patterns are stored in the neural network and different patterns are recalled at different time due to the forgetting effect.