Abstract
In this paper we explore the application of scanning capacitance microscopy (SCM) for studying focussed ion beam (FIB) induced damage in silicon. We qualitatively determine the technologically important beam shape by measuring the SCM image of FIB processed implantation spots, and by comparison of topographical and SCM data. Further, we investigate how deep impinging ions generate measurable damage below the silicon surface. For this purpose, trenches were manufactured using FIB and analysed by SCM in cross-sectional geometry.
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