Abstract
Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150–200nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.
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