Abstract
Focused ion beam (FIB) technology has capabilities for resist exposure, maskless implantation, and other applications for semicon-ductor devices with submicron dimensions. Focused ion beam systems, the JIBL-100 and 150, are able to obtain a finely focused ion probe with a diameter less than 0.1 micron using a liquid metal ion (LMI) sources. The JIBL-100 system has been developed for fundamental experiments of FIB technology. The JIBL-150 system is a lithography system controlled by a DEC-VAX11/730 and HP9920 computers. Using these systems, some experiments for sub-half micron lithography have been demonstrated. Both single and double charge Be and Si ion beams are obtainable from an Au-Si-Be LMI source. They can be used for resist exposure with various resist thickness and resist profiles. For example, a T-shaped resist profile was fabricated using 200 keV Be and Si ion beams.
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